Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices

Authors
Reed, ML Ritums, MK Stadelmaier, HH Reed, MJ Parker, CA Bedair, SM El-Masry, NA
Citation
Ml. Reed et al., Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices, MATER LETT, 51(6), 2001, pp. 500-503
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS LETTERS
ISSN journal
0167577X → ACNP
Volume
51
Issue
6
Year of publication
2001
Pages
500 - 503
Database
ISI
SICI code
0167-577X(200112)51:6<500:RTM(AN>2.0.ZU;2-4
Abstract
A new dilute magnetic semiconductor (Ga,Mn)N grown by metal organic chemica l vapor deposition (MOCVD) is reported. Vibrating sample magnetometer (VSM) and extraordinary Hall effect (EHE) measurements verified a ferromagnetic component at room temperature. The direction of the easy axis and the Curie temperature varies with the growth conditions, the latter ranging from 38 degreesC to 75 degreesC. Secondary ion mass spectroscopy (SIMS) confirms di ffusion of Mn into the GaN to a depth of 380 Angstrom. (C) 2001 Elsevier Sc ience B.V. All rights reserved.