Influence of plasma source frequency on composition and density of fluorinated amorphous carbon thin films

Citation
L. Valentini et al., Influence of plasma source frequency on composition and density of fluorinated amorphous carbon thin films, MATER LETT, 51(6), 2001, pp. 514-518
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS LETTERS
ISSN journal
0167577X → ACNP
Volume
51
Issue
6
Year of publication
2001
Pages
514 - 518
Database
ISI
SICI code
0167-577X(200112)51:6<514:IOPSFO>2.0.ZU;2-Y
Abstract
Different types of fluorinated amorphous carbon (a-C:H:F) thin films were g rown from CH4/CF4/Ar mixtures using a 13.56 MHz radiofrequency and a 13.56 MHz radiofrequency-2.45 GHz microwave hybrid plasma source. Comparison of X -ray photoelectron spectroscopy (XPS) and X-ray reflectivity (XRR) allowed us to determine the film hydrogen concentration, which depends on the plasm a source used, and showed that, independently of the plasma source employed , the fluorine incorporation occurs at the expenses of the hydrogen content . Moreover, films with lower fluorine content were deposited from the radio frequency-microwave hybrid technique. XRR measurements suggested that with increasing fluorine content, the film density changes indicating a phase tr ansition towards an open and less cross-linked structure. For a fixed gas m ixture composition, the deposition of less dense films grown by radiofreque ncy-microwave hybrid plasma source is probably associated to a different pl asma decomposition and lower energy of the bombarding species. (C) 2001 Els evier Science B.V. All rights reserved.