Epitaxial electrodeposition of lead selenide films on indium phosphide single crystals

Authors
Beaunier, L Cachet, H Froment, M
Citation
L. Beaunier et al., Epitaxial electrodeposition of lead selenide films on indium phosphide single crystals, MAT SC S PR, 4(5), 2001, pp. 433-436
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN journal
13698001 → ACNP
Volume
4
Issue
5
Year of publication
2001
Pages
433 - 436
Database
ISI
SICI code
1369-8001(200110)4:5<433:EEOLSF>2.0.ZU;2-V
Abstract
Epitaxial electro deposition of PbSe films on (111)InP single crystals is d emonstrated thanks to high energy electron diffraction. The presence of Cd( II) in the solution is mandatory in order to obtain an epitaxial growth whi ch can be continued up to 0.2 mum. High resolution electron microscopy imag es show the structural organization of the PbSe/(111)InP and reveal the qua si absence of stacking faults and microtwins. On (100)InP single crystals a weak epitaxial growth is observed. (C) 2001 Elsevier Science Ltd. All righ ts reserved.