Advanced 2D/3D ESD device simulation - a powerful tool already used in a pre-Si phase

The tremendous advantages of adequate 2D/3D device simulations for ESD opti mization are demonstrated. The pre-silicon ESD-protection concept of a new CMOS technology was completely based on high-current I-V characteristics si mulated for different NMOS variations. Silicon verification proved the exce llent simulation quality of the electrical behavior and. furthermore, gives an idea of ESD thresholds and their dependencies on layout and technology parameters. (C) 2001 Elsevier Science Ltd. All rights reserved.