Short channel effects in MOSFETs are responsible for time-dependent hot-car
rier luminescence, synchronous with the switching transitions in CMOS circu
its. We propose an optical non-invasive inspection technique for high-speed
signals, based on a high sensitivity solid-state photodetector with sharp
time resolution. This tool is able to probe the fast electrical waveforms p
ropagating through ULSI circuits without electrically loading the circuit u
nder test. The measured time resolution of 50 ps allows an equivalent analo
g bandwidth of about 20 GHz. From the experimental results and the luminesc
ence characterization of single transistors, we propose a SPICE model able
to foresee the photoemission in complex ULSI circuits, down to transistor l
evel. The optical testing equipment and the SPICE modeling are valuable too
ls for simulation, characterization and testing of fast ULSI circuits. (C)
2001 Elsevier Science Ltd. All rights reserved.