On the InGaP/InxGa1-xAs pseudomorphic high electron-mobility transistors for high-temperature operations

The high-temperature characteristics of a novel InGaP/InxGa1-xAs pseudomorp hic transistor with an inverted delta-doped channel are reported. Due to th e presented wide-gap InGaP Schottky layer and the V-shaped InxGa1-xAs chann el structure, the degradation of device performance with increasing the tem perature is not so significant. Experimentally, for a 1 x 100 mum(2) device , the gate-drain voltages at a gate leakage current of 260 muA/mm and the m aximum transconductances g(m.max) are 30 (22.2) V and 201 (169) mS/mm, at t he temperature of 300 (450) K, respectively. Meanwhile, broad and flat drai n current operation regimes for g(m), f(T) and f(max) are obtained. (C) 200 1 Elsevier Science Ltd. All rights reserved.