A new lifetime prediction method for hot-carrier degradation in n-MOSFETs with ultrathin gate oxides under V-g = V-d

Hot-carrier degradation of n-MOSFETs at high gate voltages (V-g = V-d) is e xamined. A new lifetime prediction 9 method is developed based on the unive rsal power law between the degradation of saturated drain current (dI(dsat) ) and the product of the injected charge fluence times the gate current, wh ich is independent of gate or drain voltages. This method is applied to 4 a nd 5 nm n-MOSFETs and lifetimes are estimated under their operation conditi ons. It is applicable to n-MOSFETs with ultrathin gate oxides. (C) 2001 Els evier Science Ltd. All rights reserved.