Damage production yield by electron excitation in mica for ion and clusterirradiations

Citation
S. Bouffard et al., Damage production yield by electron excitation in mica for ion and clusterirradiations, PHIL MAG A, 81(12), 2001, pp. 2841-2854
Citations number
47
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS ANDMECHANICAL PROPERTIES
ISSN journal
13642804 → ACNP
Volume
81
Issue
12
Year of publication
2001
Pages
2841 - 2854
Database
ISI
SICI code
1364-2804(200112)81:12<2841:DPYBEE>2.0.ZU;2-Y
Abstract
The production of extended defects by a high density of electron excitation has been described in many materials for ion irradiation and high-energy c luster irradiation. The parameter used to characterize these irradiations i s generally the electronic stopping power or linear energy transfer (LET). We have studied the damage production at the surface of mica by near-field microscopy for irradiations by ions at different velocities and by high-ene rgy clusters. At a given LET, the damage yield depends on the velocity of t he ions. To describe this velocity effect, we der ne a reduced LET in which only the ionizations close to the ion path are taken into account. With th is reduced LET, there is no difference between high- and low-velocity ion i rradiations. However, in this description, we observe a deviation for the c luster irradiation which comes from the lower charge of the clusters. The m ean charge of the clusters below the surface can be extracted from this dev iation.