Role of doped layers in the dephasing of two-dimensional electrons in quantum-well structures - art. no. 193309

Authors
Minkov, GM Germanenko, AV Rut, OE Sherstobitov, AA Zvonkov, BN Uskova, EA Birukov, AA
Citation
Gm. Minkov et al., Role of doped layers in the dephasing of two-dimensional electrons in quantum-well structures - art. no. 193309, PHYS REV B, 6419(19), 2001, pp. 3309
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6419
Issue
19
Year of publication
2001
Database
ISI
SICI code
0163-1829(20011115)6419:19<3309:RODLIT>2.0.ZU;2-1
Abstract
The temperature and gate voltage dependences of the phase breaking time are studied experimentally in GaAs/InGaAs heterostructures with a single quant um well. It is shown that appearance of states at the Fermi energy in the d oped layers leads to a significant decrease of the phase breaking time of t he carriers in the quantum well and to saturation of the phase breaking tim e at low temperature.