Segregation-enhanced etching of Cd during Zn deposition on CdSe quantum dots - art. no. 193311

Authors
Passow, T Heinke, H Schmidt, T Falta, J Stockmann, A Selke, H Ryder, PL Leonardi, K Hommel, D
Citation
T. Passow et al., Segregation-enhanced etching of Cd during Zn deposition on CdSe quantum dots - art. no. 193311, PHYS REV B, 6419(19), 2001, pp. 3311
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6419
Issue
19
Year of publication
2001
Database
ISI
SICI code
0163-1829(20011115)6419:19<3311:SEOCDZ>2.0.ZU;2-1
Abstract
CdSe/ZnSe quantum structures grown on GaAs(001) by molecular-beam epitaxy w ere systematically investigated by high-resolution x-ray diffraction and hi gh-resolution transmission-electron microscopy. Half of the initial Cd depo sit redesorbs when migration-enhanced epitaxy is used instead of convention al molecular-beam epitaxy for the overgrowth of the CdSe by ZnSe. This resu lt is explained by a segregation model accounting for an enhanced redesorpt ion of Cd due to Cd segregation and replacement of Cd by Zn in the topmost surface layers. The observed intermixing of CdSe/ZnSe can be explained by t his model.