Binding energies of excitons trapped by ionized donors in semiconductors -art. no. 195210

Using the hyperspherical adiabatic approach in a coupled-channel calculatio n, we present precise binding energies of excitons trapped by impurity dono rs in semiconductors within the effective-mass approximation. Energies for such three-body systems are presented as a function of the relative electro n-hole mass sigma in the range 1 less than or equal to1/sigma less than or equal to6, where the Born-Oppenheimer approach is not efficiently applicabl e. The hyperspherical approach leads to precise energies using the intuitiv e picture of potential curves and nonadiabatic couplings in an ab initio pr ocedure. We also present an estimation for a critical value of sigma (sigma (crit)) for which no bound state can be found. Comparisons are given with results of prior work by other authors.