Experimental and theoretical investigation of interband and intersubband transitions in type-II InAs/AlSb superlattices - art. no. 195318

Both theoretical and experimental results on interband and photoinduced int ersubband absorption in undoped type-II InAs/AlSb heterostructures are repo rted. The observation of the e(1) to e(2) intersubband transition without o ptical pumping enables us to evaluate the n residual doping in InAs around 10(16) cm(-3). A spatially direct transition is observed by interband absor ption. Calculations using an 18-band k . p model indicate that this transit ion involves a confined electron and a quasibound hole state, both in the I nAs laver. A good agreement with the calculations is observed on both the p olarization and the energy at which interband and intersubband transitions occur.