Tip-induced local anodic oxidation on the native SiO2 layer of Si(111) using an atomic force microscope - art. no. 195324

Citation
Yr. Ma et al., Tip-induced local anodic oxidation on the native SiO2 layer of Si(111) using an atomic force microscope - art. no. 195324, PHYS REV B, 6419(19), 2001, pp. 5324
Citations number
32
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6419
Issue
19
Year of publication
2001
Database
ISI
SICI code
0163-1829(20011115)6419:19<5324:TLAOOT>2.0.ZU;2-Q
Abstract
Atomic force mocroscope (AFM) tip-induced local anodic oxidation on a nativ e SiO2 layer of Si(111) which is in contact mode is presented in an ambient way. This local anodic oxidation was subjected to varying sample voltages. When an AFM tip was positioned on a surface point with various voltage pul ses of 10 V point oxide protrusions were tip induced. The protruded height grew exponentially due to the duration. Large-area oxide bumps also become tip induced when an AFM tip was swept across large surface areas. The bump height increased and was linearly dependent on the sample voltage. Two poss ible approaches to local anodic oxidation on the native SiO2 layer are disc ussed.