Field-induced transient hole transport in an Al0.3Ga0.7As-based p-i-n nanostructure studied by picosecond Raman spectroscopy - art. no. 195331

Electric field-induced transient hole transport in an Al0.3Ga0.7As-based p- i-n nanostructure has been studied by picosecond Raman spectroscopy at T = 300 K. Our experimental results demonstrate that at T = 300 K, for a 5-ps e xcitation laser Pulse and a hole density of n(h) congruent to 5 x 10(17) cm (-1), transient hole drift velocity increases from zero to congruent to (3 +/- 0.7) x 10(6) cm/sec when the applied electric field intensity increases from E = 0 to 15 kV/cm. The transient hole drift velocity then becomes sat urated at congruent to (8 +/- 0.8) x 10(6) cm/ sec for the applied electric field intensity of E greater than or equal to 25 kV/cm and up to 65 kV/cm. These experimental results are in good agreement with Monte Carlo simulati ons. Simultaneous measurements of transient electron drift velocities indic ate that transient electron drift velocities are about three times larger t han the corresponding transient hole drift velocities.