We report on the temperature dependent resistivity of YBa2Cu3Ox and (Y0.6Pr
0.4)Ba2Cu3Ox epitaxial thin films, measured in pulsed magnetic fields up to
50 T The zero-field rho (T) data for various levels of hole doping p can b
e scaled onto one single universal curve by using a linear transformation o
f both temperature and resistivity. This universal curve exhibits a linear
rho (T) at high temperatures T > T* (region I) and a superlinear rho (T) at
intermediate temperatures T-MI < T < T* (region II). The ground state in t
he low temperature region T < T-MI (region III) is masked by the presence o
f superconductivity below T-c, but is accessible in high magnetic fields. T
he high field measurements reveal that YBa2Cu3Ox (for x < 6.8) and (Y0.6Pr0
.4)Ba2Cu3Ox (for all levels of oxygen content) have an "insulatinglike" gro
und state at low temperatures and that the universal scaling may be extende
d to region III. The existence of a universal rho (T) curve indicates that
the same mechanisms are dominating the scattering of the charge carriers in
these materials but with a different energy scale depending on the carrier
concentration and/or the defect structure.