Bg. Salamov et al., THE RAPID VISUALIZATION OF RESISTIVITY INHOMOGENEITIES IN HIGH-RESISTIVITY SEMICONDUCTOR-FILMS, Journal of information recording, 23(5), 1997, pp. 437-445
This paper describes for the first time an application of an ionizatio
n type semiconductor photographic system using a chalcopyrite-type sem
iconductor (CuInSe2) copper-indium-diselenide film as a target for rap
id visulization of resistivity inhomogeneities. The CuInSe2 semiconduc
tor films with a resistivity of 10(7) Omega cm (thickness 0.25 mu m) i
n a planar gas discharge cell, have been studied. A measurement is rea
lized by recording the spatial distribution of the gas discharge radia
tion intensity between two parallel electrodes. A gas discharge gap ha
s been formed by a dielectric separator with thicknesses ranging from
40 to 60 mu m. A discharge has been realized in air at pressures from
760-60 Torr. The assessment of the resistivity inhomogeneities is then
based on an analysis of the discharge radiation, visualized by a phot
ograph taken through the SnO2 film.