Noise behavior in SiGe devices

Authors
Regis, M Borgarino, M Bary, L Llopis, O Graffeuil, J Escotte, L Koenig, U Plana, R
Citation
M. Regis et al., Noise behavior in SiGe devices, SOL ST ELEC, 45(11), 2001, pp. 1891-1897
Citations number
35
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
11
Year of publication
2001
Pages
1891 - 1897
Database
ISI
SICI code
0038-1101(200111)45:11<1891:NBISD>2.0.ZU;2-Q
Abstract
This paper presents an overview of SiGe technologies and their correspondin g noise properties both in the high frequency and low frequency range. We d emonstrate that SiGe bipolar technology exhibits impressive low frequency n oise performance with an excess corner noise frequency in the I kHz range. These results have been validated by low phase noise microwave oscillators based on SiGe material. (C) 2001 Elsevier Science Ltd. All rights reserved.