Recent critical issues in Si/Si1-xGex/Si heterostructure FET devices

Authors
Yousif, MYA Nur, O Willander, M
Citation
Mya. Yousif et al., Recent critical issues in Si/Si1-xGex/Si heterostructure FET devices, SOL ST ELEC, 45(11), 2001, pp. 1931-1937
Citations number
79
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
11
Year of publication
2001
Pages
1931 - 1937
Database
ISI
SICI code
0038-1101(200111)45:11<1931:RCIISH>2.0.ZU;2-O
Abstract
In this paper we present a summary of the most important critical issues in Si/Si1-xGex p-type and n-type heterostructure field-effect transistors. Th e controversial issue of alloy scattering and the phenomenon of velocity ov ershoot are reviewed and discussed. Achievements and problems associated wi th channel engineering and the use of alternative gate electrodes and high- kappa dielectric materials are also addressed. (C) 2001 Elsevier Science Lt d. All rights reserved.