Charge trapping characteristics of ultrathin oxynitrides on Si/Si1-x-yGexCy/Si heterolayers

Authors
Ray, SK Maikap, S Samanta, SK Banerjee, SK Maiti, CK
Citation
Sk. Ray et al., Charge trapping characteristics of ultrathin oxynitrides on Si/Si1-x-yGexCy/Si heterolayers, SOL ST ELEC, 45(11), 2001, pp. 1951-1955
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
11
Year of publication
2001
Pages
1951 - 1955
Database
ISI
SICI code
0038-1101(200111)45:11<1951:CTCOUO>2.0.ZU;2-L
Abstract
Ultrathin oxynitride films have been grown on partially strain compensated Si/Si1-x-yGexCy/Si layers by microwave plasma at a low temperature. Signifi cant improvements in charge-to-breakdown (Q(BD)) and charge trapping under static and dynamic electric field stress are observed for O-2/NH3/NO-plasma treated films due to efficient removal of H species from the interface. Th e trapped charge generation and charge centroid show a frequency dependence for bipolar stress and polarity dependence in case of unipolar stress. (C) 2001 Published by Elsevier Science Ltd.