Rapid thermal oxidation of radio frequency sputtered polycrystalline Si1-xGex thin films

This work presents the structural and electrical results of rapid thermal o xidation of radio frequency sputtered polycrystalline Si1-xGe. thin films. The atomic force microscopy results show Ge island sizes between 175 and 21 5 mn. The Fourier transform infrared and X-ray photoelectron spectroscopy m easurements reveal the formation of GeO2 in oxidized polycrystalline Si0.6G e0.39 and GeO2 plus GeOx in oxidized polycrystalline Si0.73Ge0.27 samples. The MOS capacitors fabricated from the polycrystalline Si-0.61 Ge-0.39 film exhibit a lower leakage current and a higher breakdown voltage compared to those fabricated from polycrystalline Si0.73Ge0.27 substrate. The interfac e trap density and fixed oxide charge density were also found to be lower f or the MOS capacitor fabricated from the polycrystalline Si-0.61 Ge-0.39 fi lm. (C) 2001 Elsevier Science Ltd. All rights reserved.