The self-consistent calculation of Si delta-doped GaAs structures

In this study, we report results of a self-consistent calculation obtained for the sub-band structure of Si delta -doped GaAs material by using a new alternative method. We will discuss the influence of the delta -doping conc entration and the delta -layer thickness on the sub-band structure for a no n-uniform distribution, which is taken as different from the known Gaussian distribution. The confining potential, the sub-band energies, the sub-band occupations, and the Fermi energy have been calculated by solving the Schr odinger and Poisson equations by using the Airy functions self-consistently .