The self-consistent calculation of Si delta-doped GaAs structures

Citation
E. Ozturk et al., The self-consistent calculation of Si delta-doped GaAs structures, APPL PHYS A, 73(6), 2001, pp. 749-754
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN journal
09478396 → ACNP
Volume
73
Issue
6
Year of publication
2001
Pages
749 - 754
Database
ISI
SICI code
0947-8396(200112)73:6<749:TSCOSD>2.0.ZU;2-Q
Abstract
In this study, we report results of a self-consistent calculation obtained for the sub-band structure of Si delta -doped GaAs material by using a new alternative method. We will discuss the influence of the delta -doping conc entration and the delta -layer thickness on the sub-band structure for a no n-uniform distribution, which is taken as different from the known Gaussian distribution. The confining potential, the sub-band energies, the sub-band occupations, and the Fermi energy have been calculated by solving the Schr odinger and Poisson equations by using the Airy functions self-consistently .