Ion-beam-assisted MBE growth of semi-spherical SiGe/Si nano-structures

Authors
Gaiduk, PI Hansen, JL Larsen, AN
Citation
Pi. Gaiduk et al., Ion-beam-assisted MBE growth of semi-spherical SiGe/Si nano-structures, APPL PHYS A, 73(6), 2001, pp. 761-763
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN journal
09478396 → ACNP
Volume
73
Issue
6
Year of publication
2001
Pages
761 - 763
Database
ISI
SICI code
0947-8396(200112)73:6<761:IMGOSS>2.0.ZU;2-8
Abstract
Semi-spherical SiGe/Si nano-structures of a new type are presented. Epitaxi al islands of 30-40 nm in base diameter and 11 nm in height and having a de nsity of about 6 x 10(10) cm(-2) were produced on (001) Si by molecular bea m epitaxial growth of Si/Si(0.5)Geo(0.5) layers with in situ implantation o f 1-keV As+ ions. It was found by cross-section transmission electron micro scopy that the islands have a complicated inner structure and consist of a micro-twin nucleus and semi-spherical nano-layers of various SiGe compositi ons. The nature of the surface patterning is interpreted by stress relaxati on through implantation-induced defects.