Towards Si1-xGex quantum-well resonant-state terahertz laser

Authors
Altukhov, IV Chirkova, EG Sinis, VP Kagan, MS Gousev, YP Thomas, SG Wang, KL Odnoblyudov, MA Yassievich, IN
Citation
Iv. Altukhov et al., Towards Si1-xGex quantum-well resonant-state terahertz laser, APPL PHYS L, 79(24), 2001, pp. 3909-3911
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
24
Year of publication
2001
Pages
3909 - 3911
Database
ISI
SICI code
0003-6951(200112)79:24<3909:TSQRTL>2.0.ZU;2-N
Abstract
We report on the experimental evidence for terahertz (THz) lasing of boron- doped strained Si1-xGex quantum-well structures. The lasing arises under st rong electric fields (300-1500 V/cm) applied parallel to interfaces. The sp ectrum of THz stimulated emission is presented showing the lasing wavelengt h near 100 mum and the modal structure caused by a resonator. The mechanism of population inversion is based on the formation of resonant acceptor sta tes in strained SiGe layer. (C) 2001 American Institute of Physics.