Problems in recent analysis of injected carrier dynamics in semiconductor quantum dots

Authors
Citation
R. Lang, Problems in recent analysis of injected carrier dynamics in semiconductor quantum dots, APPL PHYS L, 79(24), 2001, pp. 3912-3913
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
24
Year of publication
2001
Pages
3912 - 3913
Database
ISI
SICI code
0003-6951(200112)79:24<3912:PIRAOI>2.0.ZU;2-E
Abstract
This brief letter discusses conceptual problems that appeared in recent ana lysis of injected carrier dynamics in semiconductor quantum dots. It is poi nted out that the frequently adopted approximation of neglecting the upward relaxation transitions severely restricts the validity of rate equations a nalysis. The proposed alternative approach with master equations for the tr ansitions between microstates has, in principle, validity equivalent with c onventional rate equations, but the presented form of equations neglects th e upward transitions and has inaccurate expressions for the downward flow c ontributions. (C) 2001 American Institute of Physics.