T. Nagashima et M. Hangyo, Measurement of complex optical constants of a highly doped Si wafer using terahertz ellipsometry, APPL PHYS L, 79(24), 2001, pp. 3917-3919
We propose and demonstrate a terahertz (THz) time-domain spectroscopy combi
ned with ellipsometry. The complex optical constants of a Si wafer with low
resistivity are deduced from the measurements of the wave forms of reflect
ed s- and p-polarized THz pulses without reference measurement. The obtaine
d dispersion of refractive index above similar to0.2 THz shows good agreeme
nt with that predicted by the Drude theory. The complex optical constants d
educed by the THz ellipsometry in the low-frequency region are strongly aff
ected by the slight error of the ellipsometric angle originating mainly fro
m the misalignment of the rotation angles of the polarizer and analyzer. (C
) 2001 American Institute of Physics.