Measurement of optical properties of highly doped silicon by terahertz time domain reflection spectroscopy

Authors
Nashima, S Morikawa, O Takata, K Hangyo, M
Citation
S. Nashima et al., Measurement of optical properties of highly doped silicon by terahertz time domain reflection spectroscopy, APPL PHYS L, 79(24), 2001, pp. 3923-3925
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
24
Year of publication
2001
Pages
3923 - 3925
Database
ISI
SICI code
0003-6951(200112)79:24<3923:MOOPOH>2.0.ZU;2-U
Abstract
Optical properties of doped silicon wafers have been measured by means of t erahertz time domain reflection spectroscopy. A method is proposed to obtai n the relative phase by reflection accurately. By using this method, the re lative phase is obtained within an error of less than 10 mrad at 1 THz. The experimentally obtained complex conductivity of relatively high-doped sili con (rho =0.136 Omega cm) in the terahertz region agrees with the simple Dr ude model. (C) 2001 American Institute of Physics.