Local structure and chemical valency of Mn impurities in wide-band-gap III-V magnetic alloy semiconductors Ga1-xMnxN

Authors
Soo, YL Kioseoglou, G Kim, S Huang, S Kao, YH Kuwabara, S Owa, S Kondo, T Munekata, H
Citation
Yl. Soo et al., Local structure and chemical valency of Mn impurities in wide-band-gap III-V magnetic alloy semiconductors Ga1-xMnxN, APPL PHYS L, 79(24), 2001, pp. 3926-3928
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
24
Year of publication
2001
Pages
3926 - 3928
Database
ISI
SICI code
0003-6951(200112)79:24<3926:LSACVO>2.0.ZU;2-4
Abstract
Local structure and effective chemical valency of Mn impurity atoms incorpo rated in wide-band-gap (Ga,Mn)N epilayers have been investigated by using x -ray absorption fine structure techniques. The x-ray results provide direct evidence for the substitution of majority Mn atoms for the Ga sites in GaN , with an effective valency close to Mn(II), up to a rather high Mn concent ration about 2 at. %. A small fraction of the impurity atoms could also for m Mn clusters. (C) 2001 American Institute of Physics.