Citation
Sg. Sridhara et al., Luminescence from stacking faults in 4H SiC, APPL PHYS L, 79(24), 2001, pp. 3944-3946
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951
→ ACNP
Volume
79
Issue
24
Year of publication
2001
Pages
3944 - 3946
Database
ISI
SICI code
0003-6951(200112)79:24<3944:LFSFI4>2.0.ZU;2-B
Abstract
A previously unreported photoluminescence spectrum observed in certain 4H S
iC bipolar diodes after extended forward voltage operation is reported. We
assign this emission to exciton recombination at local potential fluctuatio
ns caused by stacking faults, which are created during operation of the dio
des. Possible recombination mechanisms responsible for the spectrum are dis
cussed. (C) 2001 American Institute of Physics.