Composition dependence of Raman intensity of the nitrogen localized vibrational mode in GaAs1-xNx

Authors
Seong, MJ Hanna, MC Mascarenhas, A
Citation
Mj. Seong et al., Composition dependence of Raman intensity of the nitrogen localized vibrational mode in GaAs1-xNx, APPL PHYS L, 79(24), 2001, pp. 3974-3976
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
24
Year of publication
2001
Pages
3974 - 3976
Database
ISI
SICI code
0003-6951(200112)79:24<3974:CDORIO>2.0.ZU;2-#
Abstract
We have investigated the nitrogen-localized vibrational mode (LVM) Raman in tensity and its frequency (omega (LVM)) as a function of nitrogen concentra tion in GaAs1-xNx (x less than or equal to0.04) at 300 K. The normalized Ra man intensity of nitrogen LVM with respect to that of GaAs-LO phonon as wel l as omega (LVM) exhibits a remarkable linear dependence on the nitrogen co ncentration for x less than or equal to0.03. This provides excellent calibr ation to determine nitrogen composition not only in the ternary alloy GaAs1 -xNx but also in the quaternaries such as Ga1-yInyAs1-xNx. (C) 2001 America n Institute of Physics.