K. Ortner et al., Growth and characterization of p-type HgTe/Hg1-xCdxTe single quantum wellsusing nitrogen and arsenic, APPL PHYS L, 79(24), 2001, pp. 3980-3982
p-type HgTe/Hg0.3Cd0.7Te(001) quantum wells (QWs) have been grown with mole
cular-beam epitaxy (MBE) on Cd0.96Zn0.04Te substrates using modulation dopi
ng techniques. Both plasma-excited nitrogen and evaporated cadmium arsenide
have been utilized for in situ doping during MBE growth. A comparison of t
he electrical and structural properties of QWs fabricated by the two doping
techniques has been made. Two-dimensional hole concentrations in nitrogen-
doped QWs (up to 1.0x10(12) cm(-2)) were significantly higher than in arsen
ic-doped QWs (below 0.5x10(12) cm(-2)). However, by means of a gate-control
led Hall bar, hole densities up to 1.1x10(12) cm(-2) have been achieved in
the latter system. Hall mobilities up to 1.0x10(5) cm(2)/(V s) have been me
asured. Whereas all samples exhibit pronounced although irregular Shubnikov
-de Haas oscillations, quantum Hall plateaus in the arsenic-doped samples a
re broader and better defined. (C) 2001 American Institute of Physics.