TUNNEL CURRENT FEATURES CAUSED BY DEFECT ASSISTED PROCESS IN RESONANT-TUNNELING STRUCTURES

Authors
BELYAEV AE VITUSEVICH SA GLAVIN BA KONAKOVA RV DOBROWOLSKI W MAKOSA A KRAVCHENKO LN GORNEV ES
Citation
Ae. Belyaev et al., TUNNEL CURRENT FEATURES CAUSED BY DEFECT ASSISTED PROCESS IN RESONANT-TUNNELING STRUCTURES, Acta Physica Polonica. A, 90(4), 1996, pp. 727-730
Citations number
4
Categorie Soggetti
Physics
Journal title
Acta Physica Polonica. A → ACNP
ISSN journal
05874246
Volume
90
Issue
4
Year of publication
1996
Pages
727 - 730
Database
ISI
SICI code
0587-4246(1996)90:4<727:TCFCBD>2.0.ZU;2-D
Abstract
An extra channel of electron tunnelling through a double-barrier reson ant-tunnelling GaAs/AlGaAs heterostructure caused by impurity assisted tunnelling was identified. We argue that it is due to DX centres asso ciated with dopant donor atoms which diffused into the AlGaAs barrier layer.