Highly ordered polycrystalline Si nanowire arrays were synthesized in porou
s anodic aluminum oxide (AAO) templates by the chemical vapor deposition (C
VD) method., The morphological structure, the crystal character of Si nanow
ire arrays and the individual nanowire were analyzed by the transmission el
ectron microscopy (TEM), scanning electron microscopy (SEM), atom force mic
roscopy (AFM) and the X-ray diffraction spectrum (XRD), respectively. It is
shown that most fabricated silicon nanowires (SiNWs) tend to be assembled
parallelly in bundles and constructed with highly orientated arrays. This m
ethod provides a simple and low cost fabricating craftwork and the diameter
s and lengths of SiNWs can be controlled, the large area Si nanowire arrays
can be achieved easily under such a way. The curling and twisting SiNWs ar
e fewer than those by other synthesis methods.