Influence of nitrogen ion energy on the Raman spectroscopy of carbon nitride films

Citation
Yh. Cheng et al., Influence of nitrogen ion energy on the Raman spectroscopy of carbon nitride films, DIAM RELAT, 10(12), 2001, pp. 2137-2144
Citations number
38
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
10
Issue
12
Year of publication
2001
Pages
2137 - 2144
Database
ISI
SICI code
0925-9635(200112)10:12<2137:IONIEO>2.0.ZU;2-7
Abstract
Carbon nitride films were deposited by filtered cathode vacuum arc combined with radio frequency nitrogen ion beam source. Both visible Raman spectros copy and UV Raman spectroscopy are used to study the bonding type and the c hange of bonding structure in carbon nitride films with nitrogen ion energy . Both C-N bonds and C dropN bonds can be directly observed from the deconv olution results of visible and UV Raman spectra for carbon nitride films. V isible Raman spectroscopy is more sensitive to the disorder and clustering of sp(2) carbon. The UV (244 nm) Raman spectra clearly reveal the presence of the sp(3) C atoms in carbon nitride films. Nitrogen ion energy is an imp ortant factor that affects the structure of carbon nitride films. At low ni trogen ion energy (below 400 eV), the increase of nitrogen ion energy leads to the drastic increase of sp(2)/sp(3) ratio, sp(2) cluster size and C-N b onds fraction. At higher nitrogen ion energy, increase leads to the slight increase of C dropN bonds fraction and sp(2) cluster size, slight decrease of C-N bonds fraction and sp(2)/sp(3) ratio. (C) 2001 Elsevier Science B.V. All rights reserved.