Surface engineering of diamond tips for improved field electron emission

Citation
Av. Karabutov et al., Surface engineering of diamond tips for improved field electron emission, DIAM RELAT, 10(12), 2001, pp. 2178-2183
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
10
Issue
12
Year of publication
2001
Pages
2178 - 2183
Database
ISI
SICI code
0925-9635(200112)10:12<2178:SEODTF>2.0.ZU;2-3
Abstract
Results are reported on the study of surface engineering of diamond microti ps for improved field electron emission. Two-dimensional (2D) arrays of dia mond pyramids were prepared using a molding technique. As-grown diamond pyr amids of 3 and 9 mum in size with sharp apexes were insulating and showed a relatively poor field electron emission. Several ways are examined to prov ide an electrical conductivity of diamond in order to supply electrons for the emission: diamond boron doping, partial graphitization / amorphization by nitrogen ion implantation and / or high temperature annealing, formation of built-in conductive metal layers. A perceptible improvement of surface electrical conductivity and reduction of field electron emission thresholds down to 10 V / mum was observed. For explanation of the results it was eno ugh to take into account only the geometric field enhancement on pyramids a pexes. (C) 2001 Elsevier Science B.V. All rights reserved.