pnp Si resonant interband tunnel diode with symmetrical NDR

Authors
Jin, N Berger, PR Rommel, SL Thompson, PE Hobart, KD
Citation
N. Jin et al., pnp Si resonant interband tunnel diode with symmetrical NDR, ELECTR LETT, 37(23), 2001, pp. 1412-1414
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
23
Year of publication
2001
Pages
1412 - 1414
Database
ISI
SICI code
0013-5194(20011108)37:23<1412:PSRITD>2.0.ZU;2-9
Abstract
A Si-based resonant interband tunnel diode (RITD) is presented with a pnp c onfiguration so that an integrated RITD can be easily used to form a latch. The I-V characteristics of this pnp RITD show symmetrical negative differe ntial resistance (NDR) regions in both forward and reverse bias. The top di ode shows a peak-to-valley current ratio (PVCR) of 1.63 with peak current d ensity (J(p)) of 1.5 kA/cm(2), while the bottom diode shows a PVCR of 1.51 with J(p) of 2.0 kA/cm(2).