Mosfet modeling gets physical - Toward sub-100-nm MOSFET models for circuit simulation that accurately represent new physical phenomena

Authors
Miura-Mattausch, M Mattausch, J Arora, N Yang, C
Citation
M. Miura-mattausch et al., Mosfet modeling gets physical - Toward sub-100-nm MOSFET models for circuit simulation that accurately represent new physical phenomena, IEEE CIRC D, 17(6), 2001, pp. 29-36
Citations number
29
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE CIRCUITS & DEVICES
ISSN journal
87553996 → ACNP
Volume
17
Issue
6
Year of publication
2001
Pages
29 - 36
Database
ISI
SICI code
8755-3996(200111)17:6<29:MMGP-T>2.0.ZU;2-V