The mechanisms of non-silver image recording in an infrared image converter with a semiconductor photodetector

In this study we investigate the influence of a low-pressure discharge on t he mechanisms of the image recording on metallic Bi film (i.e. non-Ag photo graphy) in an infrared image converter with a GaAs semiconductor photodetec tor. A part of the discharge energy is transferred to the electrodes of the system by the bombardment of the electrode surface due to electron-ion flo w. This process leads to the sputtering mechanism of the electrode surface material. The analysis showed that the image formed on Bi film during disch arge exposure was due to the formation of Bi2O3 on the surface. It is shown , for the first time, that the image recording on Bi film was primarily due to the effectiveness of sputtering and physicochemical interactions in the discharge gap during the transition from the Townsend discharge to the glo w discharge type. Scanning electron microscopy analysis of the sputtering p its showed that the density of the sputtered material depends on the energy of the bombarding charged particles. This dependence can be explained by t he assumption that effectiveness or sputtered process is proportional to th e densities of both the electron and ion current and the stream of sputtere d particles leaving the electrode surface.