Influences of various metal elements on field aided lateral crystallization of amorphous silicon films

In this study, the effects of various metals on field aided lateral crystal lization (FALC) behaviors of amorphous silicon (a-Si) were investigated. Un der the influence of the electric field, some metals such as Cu, Ni and Co were found to induce the lateral crystallization toward the metal-free regi on while Au, Al and Cr were not able to induce the crystallization of a-Si. On the other hand, the effect of the electric field on the lateral crystal lization was not obvious for Pd. These phenomenological differences could b e interpreted in terms of the dominant diffusing species ADDS) in the react ion between the metal and Si. It is judged that the applied electric field can enhance the crystallization velocity by accelerating the diffusion of m etal atoms because the occurrence of lateral crystallization is known to re ly on the diffusion of metal atoms than that of Si atoms. Therefore, it is thought that the only metal-dominant diffusing species in the reaction betw een metal and Si can strongly result in the crystallization of a-Si in meta l-free region.