Growth and performance study of aluminum-free InGaAs/GaAs/InGaAsP strainedquantum-well pump lasers

Authors
Shiao, HP Lee, HY Lin, YJ Tu, YK Lee, CT
Citation
Hp. Shiao et al., Growth and performance study of aluminum-free InGaAs/GaAs/InGaAsP strainedquantum-well pump lasers, JPN J A P 1, 40(11), 2001, pp. 6384-6390
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
40
Issue
11
Year of publication
2001
Pages
6384 - 6390
Database
ISI
SICI code
Abstract
The growth of InGaP, InGaAs and InGaAsP epilayers lattice matched to GaAs u sing the low pressure organometallic vapor phase epitaxy (LP-OMVPE) system was investigated. For the application of erbium-doped fiber amplifiers (EDF As), the emission wavelength and far-field pattern of the pump laser were d esigned. The optical and electrical performances of the resultant pump lase r were measured.