A. Ubukata et al., InGaAs/InGaAsP quantum well laser at 2.04 mu m for diode spectroscopy of carbon dioxide isotope, JPN J A P 1, 40(11), 2001, pp. 6406-6410
We demonstrate the utility of a compressively strained InGaAs/InGaAsP laser
emitting at 2.05 mum for diode spectroscopy of carbon dioxide isotope ((CO
2)-C-13). By applying a highly compressive strain to and using thick wells
in the active layer, the extension of the laser emission wavelength beyond
2.0 mum is achieved. The threshold current is as low as 6 mA at 283 K, and
a wave length-tuning rate of 0.016 mn/mA is obtained. A linear maximum powe
r per facet of as high as 6 mW is obtained at 283 K. The side mode suppress
ion ratio (SMSR) is 34 dB. The applicability of the diode spectroscopy syst
em for the measurement of (CO2)-C-13 is also demonstrated. The detection li
mit of (CO2)-C-13 is estimated to be less than 2 ppm for the present experi
mental setup.