Properties of TiO2 thin films on InP substrate prepared by metalorganic chemical vapor deposition

The deposition of TiO2 thin films on in InP substrate is studied by metalor ganic chemical vapor deposition (MOCVD) in the temperature range of 300-550 degreesC with Ti(i-OC3H7)(4) and O-2 as the starting materials. The morpho logy of the TiO2 films is mirror like. The structure, growthrate and grain size of the TiO2 films depend on the deposition temperature, The film stoic hometry was measured by energy dispersive X-ray (EDX) spectroscopy. The ref ractive index of the TiO2 films as measured by ellipsometry reached 2.6 at the growth temperature of 350 degreesC. Based on current-voltage measuremen t of the Al/TiO2/InP structure, the leakagecurrent is 1 x 10(-5) A/cm(2) un der the electric field of 0.06 MV/cm at the growth temperature of 500 degre esC.