Low operating voltage and high efficiency organic multilayer electroluminescent devices with p-type doped hole injection layer

Citation
Js. Huang et al., Low operating voltage and high efficiency organic multilayer electroluminescent devices with p-type doped hole injection layer, JPN J A P 1, 40(11), 2001, pp. 6630-6633
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
11
Year of publication
2001
Pages
6630 - 6633
Database
ISI
SICI code
Abstract
We demonstrate efficient organic electroluminescent devices with multiple w ell structure and a p-doped hole injection and transport layer (HTL). The m ultiple well structure improves the efficiency and the controlled p-doped H TL leads to a lower operating voltage. An amorphous starburst [4,4',4 " -tr is(N,N-diphenylamino)triphenylamine] doped with a strong organic acceptor, tetrafluoro-tetracyano-quinodimethane serves as the HTL material, a spiro-l inked compound, 2,2',7',7'-tetra-kis-(diphenylamine)-9,9'-spirobifluorene a s an interlayer to provide a favorable interface and as a barrier within th e Multiple well structure and 8-tris-hydroxyquinoline as an emitter and wel l. The double-well device exhibits low operating voltage, less than 4 V, fo r obtaining 100 cd/m(2) and the highest current efficiency exceeding 5 cd/A . Changes in the spectra due to the different well structures are also disc ussed.