Effects of pyrogenic reoxidation annealing on inversion channel mobility of 4H-SiC metal-oxide-semiconductor field-effect transistor fabricated on (11(2)over-bar0) face

The interface properties of 4H-silicon carbide (SiC) metal-oxide-semiconduc tor (MOS) capacitors and the electrical properties of MOS field-effect tran sistors (MOSFETs) on the (11 (2) over bar0) face fabricated using pyrogenic reoxidation annealing (pyrogenic ROA) have been characterized. Pyrogenic R OA reduces the interface-state density near the conduction band, resulting in an increase in the inversion channel mobility and a decrease of the thre shold voltage for the MOSFETs with both dry and wet gate-oxides. Eventually , a high channel mobility of 68 cm(2)/(V.s) was successfully achieved in a MOSFET with wet gate using the pyrogenic ROA. On the (11 (2) over bar0) fac e, the channel mobility of MOSFETs strongly depends on the interface-state density near the conduction band.