Optimum treatment for improvement of indium-halo structure for sub-0.1 mu m n-type metal-oxide-semiconductor field-effect transistor

The effect of post-thermal annealing after indium-halo implantation on the characteristics and reliability of sub-0.1 mum n-type metal-oxide-semicondu ctor field-effect transistors (nMOSFETs) was studied for the first time. We found that the control of annealing time is more efficient than that of an nealing temperature with respect to achieving junction and gate oxide integ rities. The best results of device performance were obtained with post-anne aling treatment performed at medium temperatures (e.g., 900 degreesC) for a longer time.