AlGaN/InGaN/GaN double heterostructure field-effect transistor

Novel, current collapse free, double heterostructure AlGaN/InGaN/GaN field effect transistors (DHFETs) are fabricated on the insulating SiC substrates . The simulations show that a combined effect of the bandgap offsets and po larization charges provides an excellent 2D carrier confinement. These devi ces demonstrate output RF powers as high as 4.3 W/mm in CW mode. and 6.3 W/ mm in the pulsed mode, with the gain compression as low as 4 dB.