Growth of epitaxial CoSi2 on 6H-SiC(0001)(Si)

Epitaxial growth of (111)-oriented CoSi2 has been achieved on a scratch-fre e 6H-SiC(0001)(Si) substrate. The surface was prepared using atmospheric hy drogen etching and ultrahigh vacuum Si cleaning. A high-quality CoSi2 thin film was obtained by a modified template method and co-deposition of Co and Si at 550 degreesC. The structure and morphology of the film is studied by means of reflection high electron energy diffraction, x-ray absorption fin e structure, x-ray diffraction, and atomic force microscopy. (C) 2001 Ameri can Institute of Physics.