Temperature-dependent roughness of electronically excited InP surfaces

Citation
Jp. Singh et al., Temperature-dependent roughness of electronically excited InP surfaces, J APPL PHYS, 90(12), 2001, pp. 5968-5972
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
90
Issue
12
Year of publication
2001
Pages
5968 - 5972
Database
ISI
SICI code
0021-8979(200112)90:12<5968:TROEEI>2.0.ZU;2-P
Abstract
Topographical evolution of 100 MeV Au8+-ion-irradiated InP surfaces was stu died using atomic-force microscopy (AFM). The surfaces were roughened under dense electronic excitations. Root-mean-square roughness measured from AFM studies showed an exponential saturation behavior with fluence. Sample tem perature during irradiation was found as a parameter to control the amount of roughness on the surface and the evolution of irradiated surface topogra phy is discussed in terms of thermal spike model. (C) 2001 American Institu te of Physics.