A. Esteve et al., Water-saturated Si(100)-(2x1): Kinetic Monte Carlo simulations of thermal oxygen incorporation, J APPL PHYS, 90(12), 2001, pp. 6000-6005
An atomic scale model of thermal oxidation of Si(100) has been developed ba
sed on a kinetic Monte Carlo approach. This method makes it possible to ana
lyze the effects of elementary mechanistic steps of oxidation on macroscopi
c surfaces. The initial thermal decomposition of chemisorbed hydroxyl group
s resulting from water adsorption on Si(100)-(2x1) is investigated by utili
zing extensive IR data and ab initio calculations. (C) 2001 American Instit
ute of Physics.