InAs/GaAs single-electron quantum dot qubit

Citation
Ss. Li et al., InAs/GaAs single-electron quantum dot qubit, J APPL PHYS, 90(12), 2001, pp. 6151-6155
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
90
Issue
12
Year of publication
2001
Pages
6151 - 6155
Database
ISI
SICI code
0021-8979(200112)90:12<6151:ISQDQ>2.0.ZU;2-Q
Abstract
The time evolution of the quantum mechanical state of an electron is calcul ated in the framework of the effective-mass envelope function theory for an InAs/GaAs quantum dot. The results indicate that the superposition state e lectron density oscillates in the quantum dot, with a period on the order o f femtoseconds. The interaction energy E-ij between two electrons located i n different quantum dots is calculated for one electron in the ith pure qua ntum state and another in the jth pure quantum state. We find that E-11]E-1 2]E-22, and E-ij decreases as the distance between the two quantum dots inc reases. We present a parameter-phase diagram which defines the parameter re gion for the use of an InAs/GaAs quantum dot as a two-level quantum system in quantum computation. A static electric field is found to efficiently pro long the decoherence time. Our results should be useful for designing the s olid-state implementation of quantum computing. (C) 2001 American Institute of Physics.