Characterization of the hole capacitance of hydrogenated amorphous siliconmetal-insulator-semiconductor structures

The capatiance-voltage characteristics associated with the hole accumulatio n in hydrogenated amorphous silicon metal-insulator-semiconductor structure s were investigated. The capacitance was measured by using an ac voltage an d a quasistatic method. In the ac measurements, we observed the partial res ponse of the hole capacitance, while the full response of the hole capacita nce was confirmed by quasi-static measurements. The effect of illumination on the hole capacitance was also investigated. One possible mechanism accou nting for the frequency and temperature dependencies of the hole capacitanc e is proposed. (C) 2001 American Institute of Physics.